EE 411 RF Integrated Circuits. Select Term:
This course will deliver RF integrated circuits design methodologies using CMOS and SiGe BiCMOS technologies while also providing advantages/disadvantages of other RF technologies in terms of RF/microwave figure of merits. RF integrated circuit design fundamental/parameters will be reviewed, S-parameters, nonlinearity, sensitivity, efficiency, noise figure, input, output dynamic ranges, matching, etc., and implemented, along with circuit design fundamentals, at different circuits, such as Low Noise Amplifiers, Mixers, Oscillators, Frequency Synthesizers, and Power Amplifiers, Phase Shifters, Attenuators, etc. Recitation/Lab implementations will be carried out by designing such circuits using CAD tools, such as Cadence, ADS, Momentum, Sonnet, and also will include testing practices of such circuits.
SU Credits : 3.000
ECTS Credit : 6.000
Prerequisite : Undergraduate level EE 306 Minimum Grade of D
Corequisite : EE 411