EE 408 Modeling of Semiconductor Devices Select Term:
Semiconductor materials and their electronic properties and applications to electronic devices; p-n junctions; transistors; junction field effect transistors and MOS devices; and introduction to integrated circuits. Detailed presentation of advanced concepts such as generation- recombination, hot electron effects, and breakdown mechanisms; essential features of small ac characteristics, switching and transient behavior of p-n junctions, bipolar and MOS transistors; addresses fundamental issues for device modeling and discusses the perspective and limitations of Si-devices.
SU Credits : 3.000
ECTS Credit : 6.000
Prerequisite :
( Undergraduate level EL 202 Minimum Grade of D
OR Undergraduate level EE 202 Minimum Grade of D )
AND ( Undergraduate level EL 204 Minimum Grade of D
OR Undergraduate level EE 307 Minimum Grade of D )
Corequisite :
EE 408R