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EE 408 Modeling of Semiconductor Devices Select Term:
Semiconductor materials and their electronic properties and applications to electronic devices; p-n junctions; transistors; junction field effect transistors and MOS devices; and introduction to integrated circuits. Detailed presentation of advanced concepts such as generation- recombination, hot electron effects, and breakdown mechanisms; essential features of small ac characteristics, switching and transient behavior of p-n junctions, bipolar and MOS transistors; addresses fundamental issues for device modeling and discusses the perspective and limitations of Si-devices.
SU Credits : 3.000
ECTS Credit : 6.000
Prerequisite : ( Undergraduate level EL 202 Minimum Grade of D OR Undergraduate level EE 202 Minimum Grade of D )AND ( Undergraduate level EL 204 Minimum Grade of D OR Undergraduate level EE 307 Minimum Grade of D )
Corequisite : EE 408