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EE 302 Digital Integrated Circuits Select Term:
Overview of metal-oxide semiconductor (MOS) device technologies for large scale integrated (LSI) circuits; inverter circuits, static and transient operation; complementary metal-oxide semiconductor (CMOS) logic implementation, full-custom gate design, mask layout fundamentals; static and dynamic logic circuits; sequential logic circuit designs; non-volatile semiconductor memory structures; static and dynamic random access memory design principles.
SU Credits : 3.000
ECTS Credit : 6.000
Prerequisite : Undergraduate level EL 202 Minimum Grade of D OR Undergraduate level EE 202 Minimum Grade of D
Corequisite : EE 302