Introduction to Radio Frequency and Microwave Design (EE 306)

2021 Spring
Faculty of Engineering and Natural Sciences
Electronics Engineering(EE)
3
6.00 / 6.00 ECTS (for students admitted in the 2013-14 Academic Year or following years)
Korkut Kaan Tokgöz korkut.tokgoz@sabanciuniv.edu,
Click here to view.
English
Undergraduate
EE303 ENS201 EL303
Formal lecture,Recitation,Laboratory
Project based learning,Task based learning,Simulation
Click here to view.

CONTENT

Electromagnetic wave propagation, transmission line theory microwave transmission systems, passive components, microwave tubes, solid state microwave devices, microwave integrated circuits, S-parameter analysis, microstrip and coplanar lines transmission lines.

OBJECTIVE

To teach the basics of high frequency design, behavior of passive components at RF frequencies, new design methods using Smith Chart, S parameters and transmission lines. RF amplifier concepts will be introduced. At the end, students will be able to design a high frequency single transistor amplifier as a course project (individually), and measure its performance using RF measurement tools. Using RF simulation tools efficiently is also the intended outcome of this course.

LEARNING OUTCOME

By the end of this module, students will understand the behavior of components at high frequencies, limitations of basic circuit design at high frequencies, transmission line analysis.
Use the Smith Chart for high frequency circuit design. Design matching and biasing networks.
Know the S parameters, Z, Y parameters analysis
Design high frequency transistor amplifiers.
Learn high frequency measurement concepts, and use test equipment such as network analyzers. Use RF simulation tools such as Agilent's ADS. Build a working 1 GHz single transistor amplifier with at least 10 db gain, at the end of the course

ASSESSMENT METHODS and CRITERIA

  Percentage (%)
Final 35
Midterm 25
Individual Project 30
Homework 10

RECOMENDED or REQUIRED READINGS

Textbook

RF Circuit Design, Theory and Applications} by R. Ludwig & P. Bretchko.