Electronic Circuits II (EE 202)

2021 Spring
Faculty of Engineering and Natural Sciences
Electronics Engineering(EE)
3
8.00 / 6.00 ECTS (for students admitted in the 2013-14 Academic Year or following years)
Yaşar Gürbüz yasar@sabanciuniv.edu,
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English
Undergraduate
ENS203
Formal lecture,Recitation,Laboratory
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Programs\Type Required Core Elective Area Elective
BA- Political Science
BA-Cultural Studies
BA-Cultural Studies
BA-Economics
BA-Economics
BA-International Studies
BA-International Studies
BA-Management
BA-Management
BA-Political Sci.&Inter.Relat.
BA-Political Sci.&Inter.Relat.
BA-Social & Political Sciences
BA-Visual Arts&Visual Com.Des.
BA-Visual Arts&Visual Com.Des.
BS-Biological Sci.&Bioeng.
BS-Computer Science & Eng.
BS-Computer Science & Eng.
BS-Electronics Engineering *
BS-Electronics Engineering *
BS-Industrial Engineering
BS-Manufacturing Systems Eng.
BS-Materials Sci. & Nano Eng. *
BS-Materials Science & Eng. *
BS-Mechatronics *
BS-Mechatronics *
BS-Microelectronics
BS-Molecular Bio.Gen.&Bioeng
BS-Telecommunications *

CONTENT

Concepts of basic semiconductor devices (PN junctions, MOSFETs and BJTs);design of DC bias circuits; DC/AC models of semiconductor devices; Frequency response, small/large-signal analysis of devices/circuits;single-stage, multistage and differential amplifiers; feedback and stability concepts in amplifiers; the use of CAD tools (e.g., Multisim/Pspice) in circuit design and analysis;the use of lab tools/equipments for designing and testing of dc operating points and frequency response of devices, single-and multistage amplifiers.

OBJECTIVE

To teach the structures, physical operation, terminal characteristics, large- and small-signal models, amplifier and switch applications of transistors (BJT's and FET's) and reinforce these concepts through additional exercises and design problems through recitations.

LEARNING OUTCOME

the ability to identify and correctly utilize the external lead structure and basic electrical characteristics of common semiconductor devices (PN junctions, MOSFETs and BJTs).

The ability to analyze and design DC bias circuits for semiconductor devices.
The ability to utilize DC and AC models of semiconductor devices (BJT, MOSFET and diodes) in both analysis and design.
The ability to analyze and design transistor-based, stable single / multistage, including differential, amplifiers.

ASSESSMENT METHODS and CRITERIA

  Percentage (%)
Final 30
Midterm 50
Exam 15
Assignment 5

RECOMENDED or REQUIRED READINGS

Textbook

Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, 6th Edition, Oxford University Press, 2011 (www.sedrasmith.com)

Readings

*R. C. Jaeger, Microelectronic Circuit Design. New York: McGraw-Hill, 1997.
*R. T. Howe and C. G. Sodini, Microelectronics, Prentice Hall
*D. A. Neamen, Electronic Circuit Analysis and Design, New York: McGraw-Hill, 1996
*M. N. Hornstein, Microelectronic circuits and devices
*SPICE, Gordon Roberts and Adel Sedra, Second Edition, 1996