Very-high frequency behavior of electronic devices. Avalanche, transferred electron, and acoustoelectric oscillators and amplifiers; parametric interactions. General properties and design of nonlinear solid-state microwave networks, including: negative resistance oscillators and amplifiers, frequency convertors and resistive mixers, transistor amplifiers, power combiners, and harmonic generators.
Microwave Devices and Circuits (EE 633)
Programs\Type | Required | Core Elective | Area Elective |
MA-European Studies | |||
MA-European Studies-Non Thesis | |||
MA-Political Science | |||
MA-Political Science-Non Thes | |||
MA-Visual Arts&Vis. Com Des-NT | |||
MA-Visual Arts&Visual Com Des | |||
MS-Bio. Sci. & Bioeng. LFI | |||
MS-Bio. Sci. & Bioeng. LFI-ENG | |||
MS-Biological Sci&Bioeng. | * | ||
MS-Computer Sci.&Eng. LFI | |||
MS-Computer Sci.&Eng. LFI-ENG | |||
MS-Computer Science and Eng. | * | ||
MS-Cyber Security(with thesis) | * | ||
MS-Data Science | |||
MS-Elec. Eng&Comp Sc.LFI-ENG | |||
MS-Electronics Eng&Comp Sc.LFI | |||
MS-Electronics Eng&Computer Sc | * | ||
MS-Electronics Eng. | * | ||
MS-Electronics Eng. LFI | |||
MS-Electronics Eng. LFI-ENG | |||
MS-Energy Techno.&Man. | * | ||
MS-Industrial Eng. LFI-ENG | |||
MS-Industrial Engineering | * | ||
MS-Industrial Engineering LFI | |||
MS-Manufacturing Eng-Non Thes | * | ||
MS-Manufacturing Engineering | * | ||
MS-Materials Sci & Engineering | * | ||
MS-Materials Sci. & Eng. LFI | |||
MS-Materials Sci.&Eng. LFI-ENG | |||
MS-Mathematics | |||
MS-Mechatronics | * | ||
MS-Mechatronics LFI | |||
MS-Mechatronics LFI-ENG | |||
MS-Physics | |||
MS-Physics-Non Thesis | * | ||
MS-Psychology | |||
MS-Psychology-Non Thesis | |||
PHD-Biological Sci&Bioeng. | * | ||
PHD-Comp. Sci and Eng.after UG | * | ||
PHD-Computer Science and Eng. | * | ||
PHD-Cyber Security | * | ||
PHD-Electronics Eng&ComputerSc | * | ||
PHD-Electronics Eng. | * | ||
PHD-Electronics Eng. after UG | * | ||
PHD-Experimental Psychology | |||
PHD-Industrial Engineering | * | ||
PHD-Management | |||
PHD-Manufacturing Eng after UG | * | ||
PHD-Manufacturing Engineering | * | ||
PHD-Materials Sci.&Engineering | * | ||
PHD-Mathematics | |||
PHD-Mechatronics | * | ||
PHD-Mechatronics after UG | * | ||
PHD-Physics | |||
PHD-Physics after UG | |||
PHD-Social Psychology | |||
PHDBIO after UG | * | ||
PHDCYSEC after UG | * | ||
PHDEECS after UG | * | ||
PHDEPSY after UG | |||
PHDIE after UG | * | ||
PHDMAN after UG | |||
PHDMAN after UG-Finance | |||
PHDMAN after UG-Man. and Org. | |||
PHDMAN after UG-Op.&Sup. Cha. | |||
PHDMAN-Finance Area | |||
PHDMAN-Man. and Org. Area | |||
PHDMAN-Op. & Supp. Chain Area | |||
PHDMAT after UG | * | ||
PHDMATH after UG | |||
PHDSPSY after UG |
CONTENT
OBJECTIVE
1) To understand the concept of RF integrated circuits
2) To analyze RF circuit building blocks building blocks (through lectures, homework and recitations)
3) To design these RF circuit building blocks (through lectures, homework and recitations.).
4) To design, simulate and optimize RF circuits with the aid of Cadence tools (through recit).
5) To design spiral inductors and transmission lines with the aid of SONNET tools (through recit).
6) To practice layout techniques in Cadence design environment (through recit).
7) To understand applications of RF circuits.
LEARNING OUTCOME
To understand the concept of analog and RF integrated circuits technology
To understand RF and microwave transistor technologies and their RF-Models
To understand fundamental design parameters of RF integrated circuits such as S-parameters, nonlinearity, sensitivity, efficiency, noise figure, input, output dynamic ranges etc.
To design matching and impedance transformation networks using in integrated circuits and components
To understand fundamentals of the following RF integrated system building blocks and circuits: Low Noise Amplifiers, Mixers, Oscillators, Frequency Synthesizers, and Power Amplifiers
To be able to analyze, design and simulate integrated RF circuits such as Low Noise Amplifiers, Mixers, Oscillators, Frequency Synthesizers, and Power Amplifiers
To be able to use and implement RF integrated circuits design and simulation tools such as ADS, Cadence Spectre
To be able to use and implement integrated passive components for different RF integrated circuit applications such as sonnet SONNET tools
To be able to understand RF integrated system specifications and breakdown these specs to building block and circuit levels
To be able to measure and characterize RF integrated components and circuits.
Update Date:
ASSESSMENT METHODS and CRITERIA
Percentage (%) | |
Final | 28 |
Case Study | 24 |
Individual Project | 20 |
Presentation | 28 |
RECOMENDED or REQUIRED READINGS
Textbook |
1. RF Microelectronics (2nd Edition), Behzad Razavi (Required) |
Readings |
Radio Frequency Integrated Circuit Design, J. W.M. Rogers and C. Plett |