Course Catalog
| EE 408 Modeling of Semiconductor Devices | 3 Credits | ||||||||||||
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| Semiconductor materials and their electronic properties and applications to electronic devices; p-n junctions; transistors; junction field effect transistors and MOS devices; and introduction to integrated circuits. Detailed presentation of advanced concepts such as generation- recombination, hot electron effects, and breakdown mechanisms; essential features of small ac characteristics, switching and transient behavior of p-n junctions, bipolar and MOS transistors; addresses fundamental issues for device modeling and discusses the perspective and limitations of Si-devices. | |||||||||||||
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| Prerequisite: (EL 202 - Undergraduate - Min Grade D | |||||||||||||
| or EE 202 - Undergraduate - Min Grade D) | |||||||||||||
| and (EL 204 - Undergraduate - Min Grade D | |||||||||||||
| or EE 307 - Undergraduate - Min Grade D) | |||||||||||||
| Corequisite: EE 408R | |||||||||||||
| ECTS Credit: 6 ECTS (6 ECTS for students admitted before 2013-14 Academic Year) | |||||||||||||
| General Requirements: | |||||||||||||